GETG2039 phase controlled scr high reliability operation dc power supply ac drives voltage up to 1600 v average current 390 a surge current 5,6 ka blocking characteristics characteristic conditions v rrm repetitive peak reverse voltage 1600 v v rsm non-repetitive peak reverse voltage 1700 v v drm repetitive peak off-state voltage 1600 v i drm repetitive peak off-state current, max. v drm , single phase, half wave, tj = tjmax 30 ma i rrm repetitive peak reverse current, max. v rrm , single phase, half wave, tj = tjmax 30 ma on-state characteristics i t(av) average on-state current sine wave,180 conduction, th = 55 c 390 a i t(rms) r.m.s. on-state current sine wave,180 conduction, th = 55 c 613 a i tsm surge on-state current non rep. half sine wave, 50 hz, v r = 0 v, t j = t jmax 5,6 ka i2t i2 t for fusing coordination 157 ka2s v t(to) threshold voltage t j = t jmax 1v r t on-state slope resistance t j = t jmax 0,88 m ? v tm peak on-state voltage, max on-state current i t = 800 a , tj = 25 c 1,7 v i h holding current, max t j = 25 c 300 ma i l latching current, typ t j = 25 c 700 ma triggering characteristics v gt gate trigger voltage t j = 25 c, v d = 5 v 3,5 v i gt gate trigger current t j = 25 c, v d = 5 v 200 ma v gd non-trigger voltage v d = 67% v rrm , t j = t jmax 0,25 v p gm peak gate power dissipation pulse width 0.5 ms 75 w p g(av) average gate power dissipation 1w i fgm peak gate current 8a v fgm peak gate voltage (forward) 20 v v rgm peak gate voltage (reverse) 5v switching characteristics di/dt critical rate of rise of on-state current t j = t jmax 200 a/s dv/dt critical rate of rise of off-state voltage t j = t jmax 500 v/s t q turn-off time, typ t j = t jmax , i t = 320 a, di/dt = -12.5 a/s s vr = 100 v, vd = 67% vdrm, dv/dt = 20 v/s thermal and mechanical characteristics r th(j-c) thermal resistance (junction to case) double side cooled 0,075 c/w r th(c-h) thermal resistance (case to heatsink) double side cooled 0,020 c/w t jmax max operating junction temperature 125 c t stg storage temperature -30 / 125 c f clamping force 10% 5,2 kn mass 70 g document GETG2039t001 value gps - green power semiconductors spa factory: via ungaretti 10, 16157 genova, italy phone: +39-010-667 8800 fax: +39-010-667 8812 web: www.gpsemi.it e-mail: info@gpsemi.it green power semiconductors
phase controlled scr GETG2039 f 3.5 mm (both sides) document GETG2039t001 maximum surge current d.s. cooled 0 1 2 3 4 5 6 1 10 100 number of cycle current pulses [n] i tsm [a] on-state voltage drop 0 100 200 300 400 500 600 700 800 900 0 0,5 1 1,5 2 v t [v] i t [a] t j =t jmax green power semiconductors thermal impedance (j-c) 0 0,01 0,02 0,03 0,04 0,05 0,06 0,07 0,08 0,001 0,01 0,1 1 10 100 time [s] z th(j-c) [c / w] current rating - sine wave 50 60 70 80 90 100 110 120 130 0 100 200 300 400 i t [a] heatsink temperature [c] 180 90 120 60 30 power loss - sine wave 0 100 200 300 400 500 600 700 800 0 100 200 300 400 i t [a] p f [w] 180 120 90 60 30 i n the interest of product improvement green power semiconductors reserves the right to change any specification given in this data sheet without notice. on-state voltage drop 0 100 200 300 400 500 600 700 800 900 0 0,5 1 1,5 2 v t [v] i t [a] t j =t jmax f 43 14 f 24
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